pensyarah universiti
institut kejuruteraan mikro & nanoelektronik (imen)
Biografi/ Biography :
Dr. Abdul Rahman Mohmad is a research fellow at the Institute of Microengineering and
Nanoelectronics, Universiti Kebangsaan Malaysia. He is also a Senior Member of the
Institute of Electrical and Electronics Engineers. He completed his MEng in Microelectronics
from the University of Sheffield UK in 2008 and was awarded the Hector Aitken Wainwright
Prize for his academic excellence. In 2009, he returned to the University of Sheffield to
pursue his PhD and involved in the molecular beam epitaxy (MBE) growth and
characterizations of III-V semiconductors. In 2016, he joined Prof. Chhowalla’s group in
Rutgers University USA as a postdoctoral researcher for two years. His current research
focuses on chemical vapor deposition (CVD) of layered transition metal dichalcogenides for
energy applications. He recently published a paper in Nature Materials (IF 38.9) as the first
author. Outside working hours, he dedicates most of his time to his family and humanitarian
causes.
kelvin v. y. jie, m. fairus ahmad, a. rahman mohmad, a. mawardi ismail, m. natashah norizan, m. mahyiddin ramli, safizan shaari, yusran sulaiman, shamsul a. a. rais, shazlina johari. (2024). visible light assisted charge extraction in high band gap srtio3 through the integration of a triplet sensitizer emitter thin film. - acs applied energy materials. 799-809.
z. batool, k. hild, i. marko, a. r. mohmad, j. p. r. david, x. lu, t. tiedje, s. j. sweeney. (2023). effect of bismuth incorporation on recombination mechanisms in gaasbi/gaas heterostructures. - journal of materials science: materials in electronics. 1-8.
abdul rahman mohmada, kazuki kido, takashi suemasu. (2023). investigation of defect emission from basi2 thin films prepared by co-sputtering technique. - 9th international conference on solid state science & technology 2023 (icssst2023). 77.
abdul rahman bin mohmad;akrajas bin ali umar;mohd ambri bin mohamed;rozan binti mohamad yunus. (2023). impact of niobium interstitials on structural properties and catalytic activity of metallic 2-dimensional niobium disulfide. - . .
muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, ahmad fikri mustaffa, abdul rahman mohmad. (2023). computational fluid dynamics insights into chemical vapor deposition of homogeneous mos2 film with solid precursors. - crystal research and technology. 1-8.
kelvin v. y. jie, m. fairus ahmad, a. rahman mohmad, a. mawardi ismail, m. natashah norizan, m. mahyiddin ramli, safizan shaari, yusran sulaiman, shamsul a. a. rais, shazlina johari. (2024). visible light assisted charge extraction in high band gap srtio3 through the integration of a triplet sensitizer emitter thin film. - acs applied energy materials. 799-809.
z. batool, k. hild, i. marko, a. r. mohmad, j. p. r. david, x. lu, t. tiedje, s. j. sweeney. (2023). effect of bismuth incorporation on recombination mechanisms in gaasbi/gaas heterostructures. - journal of materials science: materials in electronics. 1-8.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd rofei mat hussin, mohd ambri mohamed. (2022). direct growth and properties of few-layer mos2 on multilayer graphene prepared by chemical vapor deposition. - journal of materials science. 19704-19715.
abdul rahman mohmad, zhihao xu, yudai yamashita, takashi suemasu. (2022). assessing defect-assisted emissions in indirect bandgap basi2 by photoluminescence. - journal of luminescence. 1-6.
abdul rahman mohmad, azrul azlan hamzah, jieun yang, yan wang, ibrahim bozkurt, hyeon suk shin, hu young jeong, manish chhowalla. (2021). synthesis of metallic mixed 3r and 2h nb1+xs2 nanoflakes by chemical vapor deposition. - faraday discussions. 332-340.
muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, ahmad fikri mustaffa, abdul rahman mohmad. (2023). computational fluid dynamics insights into chemical vapor deposition of homogeneous mos2 film with solid precursors. - crystal research and technology. 1-8.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd ismahadi syono, mohd ambri mohamed. (2022). uniform growth of mos2 films using ultra-low moo3 precursor in one-step heating chemical vapor deposition. - thin solid films. 1-8.
robert d. richards, nicholas j. bailey, yuchen liu, thomas b. o. rockett, abdul rahman mohmad. (2022). gaasbi: from molecular beam epitaxy growth to devices. - physica status solidi b: basic solid state physics. 1-14.
muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, yutaka wakayama, abdul rahman mohmad. (2021). effects of post-annealing on mos2 thin films synthesized by multi-step chemical vapor deposition. - nanomaterials and nanotechnology. 1-7.
l. hasanah, c. julian, b. mulyanti, a. aransa, r. sumatri, m.h. johari, j.p.r. david, a. r. mohmad. (2020). photoluminescence and raman scattering of gaasbi alloy. - sains malaysiana. 2559-2564.
kelvin v. y. jie, m. fairus ahmad, a. rahman mohmad, a. mawardi ismail, m. natashah norizan, m. mahyiddin ramli, safizan shaari, yusran sulaiman, shamsul a. a. rais, shazlina johari. (2024). visible light assisted charge extraction in high band gap srtio3 through the integration of a triplet sensitizer emitter thin film. - acs applied energy materials. 799-809.
z. batool, k. hild, i. marko, a. r. mohmad, j. p. r. david, x. lu, t. tiedje, s. j. sweeney. (2023). effect of bismuth incorporation on recombination mechanisms in gaasbi/gaas heterostructures. - journal of materials science: materials in electronics. 1-8.
muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, ahmad fikri mustaffa, abdul rahman mohmad. (2023). computational fluid dynamics insights into chemical vapor deposition of homogeneous mos2 film with solid precursors. - crystal research and technology. 1-8.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd rofei mat hussin, mohd ambri mohamed. (2022). direct growth and properties of few-layer mos2 on multilayer graphene prepared by chemical vapor deposition. - journal of materials science. 19704-19715.
robert d. richards, nicholas j. bailey, yuchen liu, thomas b. o. rockett, abdul rahman mohmad. (2022). gaasbi: from molecular beam epitaxy growth to devices. - physica status solidi b: basic solid state physics. 1-14.
a. r. mohmad, z. xu, y. yamashita, t. suemasu. (2022). investigating defect-assisted emission in basi2 by power dependent photoluminescence. - 2022 ieee international conference on semiconductor electronics (icse). 133-135.
muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, abdul rahman mohmad. (2021). inhomogenous deposition of vertical mos2 grown by chemical vapor deposition. - 2021 ieee regional symposium on micro and nanoelectronics (rsm). 24-26.
lilik hasanah, cahya julian, budi mulyanti, ananda aransa, roni sumatri, muhammad hilmi johari, john david, abdul rahman mohmad. (2020). photoluminescence and raman studies on gaas1-xbix grown on gaas. - 2020 ieee 8th international conference on photonics (icp). 1-2.
khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers. (2019). characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices. - materials today proceedings. 625-631.
abdul rahman mohmad & john p r david. (2018). band gap engineering of gaasbi alloy for emission of up to 1.52um. - ieee international conference on semiconductor electronics 2018. .
abdul rahman mohmad. (2018). teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan. - . 17.
abdul rahman mohmad. (2018). teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan. - . 17.
abdul rahman mohmada, kazuki kido, takashi suemasu. (2023). investigation of defect emission from basi2 thin films prepared by co-sputtering technique. - 9th international conference on solid state science & technology 2023 (icssst2023). 77.
abdul rahman mohmad. (2023). pendidik perlu bijak nilai, rancang pdp berasas ai. - rencana berita harian. 11.
abdul rahman bin mohmad;akrajas bin ali umar;mohd ambri bin mohamed;rozan binti mohamad yunus. (2023). impact of niobium interstitials on structural properties and catalytic activity of metallic 2-dimensional niobium disulfide. - . .
akrajas bin ali umar;abdul rahman bin mohmad;mohd yusri bin abd rahman. (2022). ultimate thin tio2-tis2 hybrid nanosheet for high performance perovskite solar cells. - . .
robert d. richards, nicholas j. bailey, yuchen liu, thomas b. o. rockett, abdul rahman mohmad. (2022). cover page physica status solidi b volume 259 issue 2. - . 1.